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Weyl Fermion Devices for Chipscale Communications

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[Technical Report, Final Report]

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During the fourth year of this research program, investigations continued on multiterminal devices fabricated from semimetals with near-zero energy bandgap to study the possibility of Weyl fermion-effects on their operation and performance. With their exotic, topologically protected properties, Weyl fermion devices may produce electronic and optical circuits with ultra-high speeds and ultra-low power dissipationless drain, with operation at far-infrared wavelengths. Work continued on the Weyl semimetals MoTe2 and WTe2, as well as on low energy bandgap GeSn alloys, which were hoped to have Weyl-like behavior. The infrared photo response of multi-terminal devices was measured at wavelengths near 10 micrometers. It was found that these devices had interesting polarization-dependentphoto response and could distinguish the incident polarization including circular from horizontal and vertical linear polarization.

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[A, Approved For Public Release]