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Spin Based Low Field Magnetoresistance as a Novel Tool for the Investigation of Radiation Effects in 3D and Vertically Integrated Microstructures

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[Technical Report, Final Report]

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University of Iowa

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We have extensively explored near zero field magnetoresistance NZFMR effects, due to spin-dependent recombination, spin-dependent charge pumping and spin-dependent trap-assisted tunneling in devices that have been irradiated or have undergone electrical stress to mimic the effects of radiation. We have correlated the amount of stress to the defect density and effects on NZFMR. In addition to Si MOSFETs we have conducted studies of amorphous hydrogenated silicon and silicon nitride films, aluminum oxide gate oxides, and SiC MOSFETs.


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[A, Approved For Public Release]