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Accession Number:
AD1183954
Title:
Fundamental Study of III-V Bismides for Space Applications
Descriptive Note:
[Technical Report, Final Report]
Corporate Author:
ARIZONA STATE UNIV TEMPE
Report Date:
2022-07-31
Pagination or Media Count:
128
Abstract:
The structural and optical properties of InAsSbBi samples grown on GaSb substrates by molecular beam epitaxy at Arizona State University and the Air Force Research Laboratory are measured by x-ray diffraction, Rutherford backscattering, transmission electron microscopy, and photoluminescence spectroscopy. The Bi mole fractions incorporated range from 0.04 to 1.81 percent. The sample luminescence at wavelengths of 3.72 - 6.12 micrometers at low temperature. X-ray diffraction scans of the symmetric 400 and asymmetric 511 crystal planes provide the reciprocal space coordinates of the InAsSbBi layer peaks and GaSb substrate peaks. The relaxation and tilt of the InAsSbBi layers is determined from these measurements. Nomarski optical microscopy and atomic force microscopy are used to investigate the surface morphology of the InAsSbBi samples. Several 210 nm thick bulk InAsSbBi samples are irradiated using 63 MeV protons. The photoluminescence before and after radiation treatment is compared to analyze the radiation hardness of InAsSbBi. An in-depth x-ray diffraction study is performed for 210 nm thick bulk InAsSbBi grown on 100 on-axis and offcut GaSb substrates, with offcuts of 1 deg to 011 and 4 deg to 111A. The structural and optical properties of InAsSb, GaInAsSb, InAsSbBi, and GaInAs SbBiare determined from X-ray diffraction and photoluminescence and are compared. The diffusion length of mid-wave type-II InAsInAsSb and InGaAsInAsSb superlattices is calculated from a diffusion model utilizing steady-state photoluminescence. A kinetic model for molecular beam epitaxy growth of InAsSbBi is developed and fitted to bulk and quantum well samples grown at 400 - 420 deg C. A semi-empirical model for the fundamental absorption edge in direct-gap semiconductors is developed and fitted to GaAs, GaSb, InAs, and InSb substrates.
Distribution Statement:
[A, Approved For Public Release]
