Accession Number:



Radiation Characterization of STT-RAM Devices

Descriptive Note:

[Technical Report, Final Report]

Corporate Author:

University of California, Irvine

Personal Author(s):

Report Date:


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Studied the effect of gamma and neutron radiation on new STT-RAMs that we developed, evaluated defects and radiation induced damages on thin films that lead to variations in tunneling current, SEU and RW rad-hard circuit. Plasmonic methods were devised for in-situ evaluation using modeling and device fabrication. Additionally, a rad-hard readwrite circuit was designed to tolerate SEU and errors due to irradiation, using modeling and fabricated device parameters. As an extension of our efforts, we evaluated the effect of gamma radiation on spintronics based neurocomputers, and analyzed their defects and radiation induced damages, and measured their computation power under radiation. Experimental study demonstrated radiation hardness of Spin Torque Oscillators STOs both free running and with injection locking under heavy gamma radiation. Radiation hardening of the peripheral CMOS sense circuit was achieved by changing transistor dimension and gain. Improved design of optical readout scheme for arrays of MTJs. In summary, our results showed very little degradation in the characteristic of the STT-RAM under a heavy radiation regime. STT-RAM devices are well situated for space applications and other venues because of their radiation tolerance. The CMOS circuit surrounding the STT-RAM required rad-hard circuitry to mitigate any damages to the overall design.


Subject Categories:

  • Electromagnetic Shielding
  • Electrical and Electronic Equipment

Distribution Statement:

[A, Approved For Public Release]