Accession Number:



Radiation Effects in N-face and Nonpolar m-plane III-Nitrides and Heterostructures

Descriptive Note:

[Technical Report, Final Report]

Corporate Author:

Pennsylvania State UniversityUniversity of New MexicoUniversity of UtahPacific Northwest National Laboratory

Report Date:


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The effects of gamma rays and neutrons on Ga-polar and N-polar pn-diode and Schottky diode test structures were evaluated. Across all samples and irradiations conducted, the most sensitive part of test structures was observed to be the contact to p-type layers. Differences in response to gamma rays between test structures grown on freestanding GaN vs. sapphire, which contain respectively lower and higher densities of threading dislocations, were also observed. Freestanding samples recovered nearly fully over the course of a few weeks, while no recovery was observed for the samples on sapphire. Differences in response to neutron irradiation were also observed for N-face vs Ga-face c-plane test structures.

Subject Categories:

  • Nuclear Physics and Elementary Particle Physics
  • Solid State Physics
  • Electricity and Magnetism
  • Electrical and Electronic Equipment

Distribution Statement:

[A, Approved For Public Release]