Accession Number:



Fundamental Research Into Radiation Effects in Cryogenic Electronics Technologies

Descriptive Note:

[Technical Report, Final Report]

Corporate Author:

University of Tennessee at Chattanooga

Personal Author(s):

Report Date:


Pagination or Media Count:



The overall goal of this fundamental research project was to expand the state-of-the-art understanding of radiation interactions in relevant cryogenic CMOS technologies at and below 180 nm feature sizes. This goal was accomplished through the innovative design of test chips for radiation characterization in a commercially available CMOS technology relevant to the focal plane array FPA and read-out-integrated circuit ROIC cryogenic electronics communities, and the development of a modeling strategy analysis of radiation effects degradation mechanisms, and for prediction of the natural space radiation effects response. Results have been presented to the radiation effects community in the form of journal and conference submissions, through technical interchange meetings, and through the release of technology characterization vehicle TCV and circuit test vehicle CTV design files. Full manuscripts are included as appendices.


Subject Categories:

  • Radiobiology
  • Electrical and Electronic Equipment

Distribution Statement:

[A, Approved For Public Release]