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Gallium Nitride (GaN) RF Challenge: BAE Systems and Qorvo Submissions

Descriptive Note:

[Technical Report, Technical Note]

Corporate Author:

DEVCOM Army Research Laboratory

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The DOD Gallium Nitride GaN RF Challenge is enabling development and fabrication of the best-competed concepts for high-performance, efficient broadband Monolithic Microwave Integrated Circuits MMICs related to the 5G expansion and to critical EW needs. The US Army Combat Capabilities Development Command Army Research Laboratory was one of the design teams for the BAE 0.18-m GaN multi-project wafer fabrication and was also one of the design teams for the Qorvo 0.15-m GaN multi-project wafer fabrication. This technical note is a brief overview of the DEVCOM Army Research Laboratory design submissions for the GaN RF Challenge.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

[A, Approved For Public Release]