Accession Number:

AD1122844

Title:

Gallium Nitride (GaN) RF Challenge: BAE Systems and Qorvo Submissions

Descriptive Note:

[Technical Report, Technical Note]

Corporate Author:

DEVCOM Army Research Laboratory

Personal Author(s):

• Penn, John
• Hawasli, Sami
• Darwish, Ali

Report Date:

2021-02-09

Pagination or Media Count:

12

Abstract:

The DOD Gallium Nitride GaN RF Challenge is enabling development and fabrication of the best-competed concepts for high-performance, efficient broadband Monolithic Microwave Integrated Circuits MMICs related to the 5G expansion and to critical EW needs. The US Army Combat Capabilities Development Command Army Research Laboratory was one of the design teams for the BAE 0.18-m GaN multi-project wafer fabrication and was also one of the design teams for the Qorvo 0.15-m GaN multi-project wafer fabrication. This technical note is a brief overview of the DEVCOM Army Research Laboratory design submissions for the GaN RF Challenge.

Descriptors:

• monolithic microwave integrated circuits
• compound semiconductors
• 5g wireless networks
• amplifiers
• gallium nitrides
• integrated circuits
• microwave integrated circuits
• military research
• circuits
• broadband
• department of defense
• semiconductors
• electronics laboratories
• fabrication
• gallium
• microwaves
• nitrides
• wireless networks
• abstracts
• electron mobility

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

[A, Approved For Public Release]