Accession Number:

AD1116421

Title:

Low-Pressure Chemical Vapor Deposition (LPCVD) of Few-Layers Molybdenum Disulfide (MoS2) Crystals

Descriptive Note:

Technical Report,01 Jun 2019,30 Sep 2020

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States

Personal Author(s):

Report Date:

2020-11-24

Pagination or Media Count:

28.0

Abstract:

Two-dimensional 2D molybdenum disulfide MoS2 is a highly promising material for various 2D and quantum-enabled applications due to its excellent electrical and optical properties such as mobility of 200 700 cm2V-1s-1, fast onoff switch ratio of 107, and high photoresponsivity of 7.5 mAW under low illumination power 80 W. Thus, a large-scale high-quality material is needed for the next technological breakthrough. In this report, we show a Low-Pressure Chemical Vapor Deposition LPCVD synthesis of MoS2 crystals on silicon substrates. A systematic optimization of the growth parameters, including precursor powders quantity, temperature, pressure, the relative positions of the precursors components, and the substrate orientation resulted in control of MoS2 crystal thickness. The presented work provides the basis not only for developing a large-scale MoS2 films but it can also be applied to synthesize other transition metal dichalcogenide materials and their heterostructures.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE