Accession Number:

AD1111666

Title:

Sample Preparation Procedure for TEM Imaging of Semiconductor Materials

Descriptive Note:

[Technical Report, Technical Report]

Corporate Author:

U.S. Army Research Laboratory

Personal Author(s):

Report Date:

2004-06-01

Pagination or Media Count:

16

Abstract:

Transmission electron microscopy TEM allows detailed materials characterization at high resolutions. Lattice imaging requires the preparation of electron transparent samples. Preparing such thin samples without changing the characteristics of the material is not a trivial process. The Electro-Optics and Photonics Division EO and P of the Army Research Laboratory uses TEM for structural characterization of MBE-grown semiconductor materials. Major projects that rely on TEM include the following structures type-II superlattices, quantum well and quantum dot superlattices, II-VI films, and GaN-based structures.. TEM analysis provides the grower with high and low resolution images of the interfaces, surfaces, and defects. This report discusses the typical preparation procedures used to fabricate TEM samples.

Subject Categories:

  • Test Facilities, Equipment and Methods
  • Optics
  • Electrical and Electronic Equipment

Distribution Statement:

[A, Approved For Public Release]