Accession Number:

AD1105873

Title:

Light-Mass-Atom Semiconductor Materials and Devices

Descriptive Note:

Technical Report,15 Dec 2016,14 Dec 2019

Corporate Author:

CORNELL UNIVERSITY ITHACA United States

Personal Author(s):

• Xing,Huili G.
• Jena,Debdeep

Report Date:

2020-04-24

Pagination or Media Count:

12.0

Abstract:

In the 3 years of this project, the PIs have explored 4 wide bandgap semiconductors and their applications AlN, ScAlN, BN and Ga2O3.The PIs and their students published 27 journal papers and 11 conference papers in venues including Science, IEDM etc. Below we briefly summarize some of the achievements. For more details, please refer to the full list of publications in the end of the report.

Descriptors:

• heterojunctions
• band gaps
• phonons
• semiconductors
• compound semiconductors
• crystal structure
• semiconductor devices
• power electronics
• molecular beam epitaxy
• epitaxial growth
• crystals
• crystal lattices
• transistors
• schottky diodes

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE