Group-IV Photonic-Materials by Molecular Beam Epitaxy
Technical Report,30 Sep 2015,29 Sep 2019
Tufts University Medford United States
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The grant was awarded in conjunction with a DURIP grant FA9550-15-1-0352 and the combined primary objective is to renovate an existing SiGe molecular beam epitaxy MBE system and convert it to a state of the art SiGeSn system. The system identified for this project is the dual-chamber VG90 system designed and built by John C. Bean while he was at Bell Labs in the mid-90s before he moved, with the system, to the University of Virginia UVa. As the PI, Tom Vandervelde, was one of the few graduate students that John Bean ever trained, John willingly donated the system along with the rest of his laboratory equipment to Tom, Figure 1. This donation formed the core of the new Tufts Epitaxial Core TEC Facility. The total value of the equipment in this facility is over 27,000,000. The versatility of this MBE system was the of particular interest, with each deposition chamber capable of handling six inch wafers and can use up to three e-gun sources, three effusion cells, and a gas based low energy implantation system. The chambers are also physically large measuring over a meter in diameter this leaves a lot of room to add characterization and other sensing tools.