Accession Number:

AD1104807

Title:

Silicon Compatible Electrically Pumped Direct Bandgap Ge/GeSn Laser

Descriptive Note:

Technical Report,15 Sep 2015,29 Sep 2019

Corporate Author:

LELAND STANFORD JUNIOR UNIVERSITY STANFORD United States

Personal Author(s):

Report Date:

2019-11-18

Pagination or Media Count:

51.0

Abstract:

We have made several important contributions towards implementation of a practical CMOS compatible laser, including 1. A rigorous analysis of the strong interaction between uniaxial strain and parasitic absorption in germanium with major implications for Si -compatible lasing 2. Experimental demonstration of a strained Ge light source 3. Silicon-Compatible Fabrication of Inverse Woodpile Photonic Crystals with a Complete Band Gap

Subject Categories:

  • Optics
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE