Accession Number:

AD1104067

Title:

Ultrawide Bandgap Semiconductors: Research Opportunities and Challenges

Descriptive Note:

Journal Article - Open Access

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States

Report Date:

2017-12-04

Pagination or Media Count:

49.0

Abstract:

Ultrawide-bandgap UWBG semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures-of-merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower-bandgap cousins in high-power and RF electronics, as well as in deep-UV optoelectronics, quantum information, and extreme-environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al-content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near-term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE