Plasma-enhanced atomic layer deposition of titanium vanadium nitride
Journal Article - Open Access
NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States
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The authors have studied the plasma-enhanced atomic layer deposition of TixV1xN using tetrakis dimethylamido titanium, tetrakisdimethylamido vanadium, and nitrogen plasma. Through modification of the ratio of TiN to VN deposition cycles, the value of x can be well controlled. X-ray photoelectron spectroscopy analyses indicate that the films are slightly nitrogen-rich with 110 carbon and oxygen. Resistivity estimated from four point probe measurements were 85 cm TiN and 107 cm VN for the binary nitrides with a maximum of 182 cm at x 0.5. The binary nitride densities were 56.5 lower than bulk material literature values with interstitial stoichiometry film densities transitioning continuously from the less dense TiN 5.04 gcm3 to the more dense VN 5.69 gcm3. Crystallinity increases with vanadium content as indicated by the XRD 111 and 020 peak heights and the Scherrer crystallite size estimates. Films demonstrated excellent tribological properties with wear rates of 1.1 106 and 7.7 108 mm3N m and friction coefficients of 0.33 and 0.38 for TiN and VN, respectively.
- Fabrication Metallurgy
- Inorganic Chemistry