Basic Single-Event and Total-Ionizing Dose Mechanisms in Ge/InGaAs-based CMOS Transistors with ALD High k-Dielectric
Technical Report,20 Jun 2014,19 Sep 2018
Stanford University Red Wood City United States
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Objective of this work was to determine, using theory and experiments, the basic mechanisms of single-event and total ionizing dose effects in InGaAs and GeSi heterostructure MOSFETs with high-k dielectricsmetal gate. We established understanding of radiation-induced charge transport and collection mechanisms on the structure and composition of nanoelectronic Ge and InGaAs FETs on Si, and, on the nature of the ionizing species by modelingdesigning devices, fabricating MOS test structures, and testing their electrical behavior under radiation exposure.
- Electrical and Electronic Equipment