Accession Number:

AD1103218

Title:

Characterization of Reactive Ion Etch Chemistries Using Direct Write Lithography

Descriptive Note:

Technical Report,01 Sep 2018,06 Mar 2020

Corporate Author:

AIR FORCE INSTITUTE OF TECHNOLOGY WRIGHT-PATTERSON AFB OH WRIGHT-PATTERSON AFB United States

Personal Author(s):

Report Date:

2020-03-06

Pagination or Media Count:

132.0

Abstract:

The DoD requires a variety of COTS and number of custom microelectronics to provide important functionality to critical military systems. Photo-lithography and DRIE are two techniques commonly used in the development of deep anisotropic features for the fabrication and modification of microelectronics and MEMS. However, standard photo-lithography techniques are ineffective for unique substrate geometries and DRIE processes require a chemical passivation step only applicable to Si substrates. This work confirmed the capability of RIE using DWL to perform deep, highly selective, an isotropic etching on elevated, non-circular substrates.

Subject Categories:

  • Industrial Chemistry and Chemical Processing
  • Printing and Graphic Arts

Distribution Statement:

APPROVED FOR PUBLIC RELEASE