Characterization of Reactive Ion Etch Chemistries Using Direct Write Lithography
Technical Report,01 Sep 2018,06 Mar 2020
AIR FORCE INSTITUTE OF TECHNOLOGY WRIGHT-PATTERSON AFB OH WRIGHT-PATTERSON AFB United States
Pagination or Media Count:
The DoD requires a variety of COTS and number of custom microelectronics to provide important functionality to critical military systems. Photo-lithography and DRIE are two techniques commonly used in the development of deep anisotropic features for the fabrication and modification of microelectronics and MEMS. However, standard photo-lithography techniques are ineffective for unique substrate geometries and DRIE processes require a chemical passivation step only applicable to Si substrates. This work confirmed the capability of RIE using DWL to perform deep, highly selective, an isotropic etching on elevated, non-circular substrates.
- Industrial Chemistry and Chemical Processing
- Printing and Graphic Arts