Accession Number:

AD1100814

Title:

Radiation Effects in Diamond Substrates and Transistors

Descriptive Note:

Technical Report,01 Jan 2017,31 Dec 2019

Corporate Author:

University of Maryland College Park United States

Personal Author(s):

Report Date:

2020-05-01

Pagination or Media Count:

82.0

Abstract:

Fielld effect transistors FET based on diamond have 2- dimensional hole gas 2DHG as the conduction channel. In terms of usability in harsh environment, an important aspect of diamond based FETs is its promise of radiation hardness. Two different types of radiation were used. A cyclotron was used for proton irradiation on diamond substrates, and a high capacity dry cell, panoramic gamma irradiator with 60Co as source material was used for gamma irradiation on diamond-based FETs. Diamond substrates were irradiated with protons at 152 keV and fluence of 1012 particlescm2. Diamond-based devices show promise of radiation-hardness, owing to high binding energy of carbon atoms.

Subject Categories:

  • Nuclear Physics and Elementary Particle Physics
  • Electrical and Electronic Equipment
  • Miscellaneous Materials

Distribution Statement:

APPROVED FOR PUBLIC RELEASE