A Graphene Integrated Highly Transparent Resistive Switching Memory Device
Journal Article - Open Access
NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States
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We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory TRRAM device. The indium tin oxide ITOAl2O3graphene nonvolatile memory device possesses a high transmittance of greater than 82 percent in the visible region 370-700 nm and exhibits stable and non-symmetrical bipolar switching characteristics with considerably lowset and reset voltages less than - 1 V. The vertical two-terminal device shows an excellent resistive switching behavior with a high on-off ratio of similar to 5 x 103. We also fabricated a ITOAl2O3Pt device and studied its switching characteristics for comparison and a better understanding of the ITOAl2O3graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.
- Electricity and Magnetism
- Refractory Fibers