Accession Number:

AD1100750

Title:

A Graphene Integrated Highly Transparent Resistive Switching Memory Device

Descriptive Note:

Journal Article - Open Access

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States

Report Date:

2018-04-30

Pagination or Media Count:

10.0

Abstract:

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory TRRAM device. The indium tin oxide ITOAl2O3graphene nonvolatile memory device possesses a high transmittance of greater than 82 percent in the visible region 370-700 nm and exhibits stable and non-symmetrical bipolar switching characteristics with considerably lowset and reset voltages less than - 1 V. The vertical two-terminal device shows an excellent resistive switching behavior with a high on-off ratio of similar to 5 x 103. We also fabricated a ITOAl2O3Pt device and studied its switching characteristics for comparison and a better understanding of the ITOAl2O3graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

Subject Categories:

  • Electricity and Magnetism
  • Refractory Fibers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE