Switching Behavior and Forward Bias Degradation of 700v, 0.2a, Beta-Ga2O3 Vertical Geometry Rectifiers
Journal Article - Open Access
NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States
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We report the switching recovery characteristics of large area contact dimension 0.04 x 0.04 sq cm vertical geometry beta-Ga2O3 Schottky rectifiers, consisting of Si-doped epitaxial layers on conducting bulk substrates. Devices that were switched from forward current of 0.225 A to reverse off-state voltage of -700 V in an inductive load test circuit showed a recovery time tsub rr of 82 ns, with a reverse recovery current Isub rr of 38 mA and dIdt of -2.28 A. microsecexp -1. This shows the potential of Ga2O3 rectifiers for power switching applications, provided effective thermal management schemes can be implemented. Devices deliberately tested to failure under forward bias conditions exhibit delamination and cracking of the NiAu contact and underlying epitaxial Ga2O3 due to the low thermal conductivity of the Ga2O3. This failure mode is different to that under high reverse breakdown conditions, where pits formed by material failure under the high field generated at the edge of the rectifying contact occurs.
- Electrical and Electronic Equipment