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Accession Number:
AD1099923
Title:
Reverse Breakdown in Large Area, Field-Plated, Vertical Beta-Ga2O3 Rectifiers
Descriptive Note:
Journal Article - Open Access
Corporate Author:
NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States
Report Date:
2019-03-19
Pagination or Media Count:
7.0
Abstract:
There is interest in developing large area Ga2O3 rectifiers for applications in hybrid power converters. Vertical geometry, Schottky rectifiers with area 1.2 x 1.2 mm2 fabricated on thick 8 mu m, undoped n 4.4 x 1015 cm-3 beta-Ga2O3 epitaxial layers oN conducting bulk substrates exhibit both high forward current 1A in pulsed mode and reverse breakdown voltage VB 760V. This breakdown voltage was similar to 200V higher than rectifiers without the presence of a bilayer SiO2SiNx field plate. This edge termination is critical for obtaining high breakdown voltage by reducing electric field crowding around the metal contact periphery. Optimization of the field plate design is still needed, since devices are observed experimentally to breakdown at the contact periphery. When purposely driven to failure at high reverse bias, pits are observed in the high field regions at the edge of the contact. The specific on-resistance Ron for these large area rectifiers was 22 m Omega.cm-2, with a figure-of-merit V-B2Ron of 26 MW. cm-2. The potential of Ga2O3 for power electronics is clear when it is realized that these values are still an order of magnitude lower than theoretical values. The diode on-off ratio was in the range 2.7 x 107-2.2 x 109 when switching from 1.5V forward bias to 1-100V reverse bias.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
