Valence Band States in an InAs/AlASsb Multi-Quantum Well Hot Carrier Absorber
Journal Article - Open Access
NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States
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In this study, detailed temperature dependent simulations for absorption and photogenerated recombination of hot electrons are compared with experimental data for an InAsAlAsSb multi-quantum well. The simulations describe the actual photoluminescence PL observations accurately in particular, the room temperature e1-hh1 simulated transition energy of 805 meV closely matches the 798 meV transition energy of the experimental PL spectra, a difference of only 7 meV. Likewise, the expected energy separations between local maxima p1-p2 in the simulatedexperimental spectra have a difference of just 2 meV a simulated energy separation of 31 meV compared to the experimental value of 33 meV. Utilizing a non equilibrium generalized Planck relation, a full spectrum fit enables individual carrier temperatures for both holes and electrons. This results in two very different carrier temperatures for holes and electrons where the hole temperature, Th, is nearly equal to the lattice temperature, TL while, the electron temperature, Te, is hot i.e., Te TL. Also, by fitting the experimental spectra via three different methods a hot carrier temperature is associated with electrons only all three methods yield similar hot carrier temperatures.
- Electricity and Magnetism