Diffusion of Implanted Ge and Sn in Beta-Ga2O3
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NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States
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The n-type dopants, Ge and Sn, were implanted into bulk -201 beta-Ga2O3 at multiple energies 60, 100, 200 keV and total doses of approx. 1014 cm-2 and annealed at 1100 deg. C for 10-120 s under either O-2 or N-2 ambients. The Ge-implanted samples showed almost complete recovery of the initial damage band under these conditions, with the disordered region decreasing from 130 to 17 nm after 1100 deg. C anneals. Fitting of secondary ion mass spectrometry profiles was used to obtain the diffusivity of both Ge and Sn, with values at 1100 deg. C of 1.05 x 10-11 cm s-1 for Ge and 2.7 x 10-13 cm s-1 for Sn for annealing under O-2 ambients. Some of the dopant is lost to the surface during these anneals, with a surface outgas rate of 1-3 x 10-7 s-1. By sharp contrast, the redistribution of both dopants was almost completely suppressed during annealing in N-2 ambients under the same conditions, showing the strong influence of point defects on dopant diffusivity of these implanted dopants in beta-Ga2O3. Published by the AVS.
- Atomic and Molecular Physics and Spectroscopy