Accession Number:

AD1098819

Title:

Coefficients of Thermal Expansion of Single Crystalline Beta-Ga2o3 and in-Plane Thermal Strain Calculations of Various Materials Combinations with Beta-Ga2o3

Descriptive Note:

Journal Article - Open Access

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States

Report Date:

2018-12-28

Pagination or Media Count:

7.0

Abstract:

The coefficients of thermal expansion CTEs of single crystalline, monoclinic beta-Ga2O3 were determined by employing high-resolution X-ray diffraction measurements. This work reports the CTE measurements on a single crystalline beta-Ga2O3 substrate. The CTE values along the a, b, and c axes are 3.77 x 10-6 degrees C-1, 7.80 x 10-6 degrees C-1, and 6.34 x 10-6 degrees C-1, respectively, and the CTE of the angle beta the angle between the a and c axes is determined to be 1.31 x 10-4 degrees K-1. All CTE values reported here are linear under the temperature regime between room temperature and 1000 degrees C. All measurements were performed in a controlled nitrogen gas environment, and no surface degradation was observed after these measurements. Thermal strain calculations with different material combinations involving beta-Ga2O3 are also presented relevant to both epitaxial and wafer bonding applications for Si, InP, 3C-SiC, 6H-SiC, GaN, and sapphire. C 2018 Authors.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE