Accession Number:

AD1098686

Title:

Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

Descriptive Note:

Journal Article - Open Access

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States

Personal Author(s):

• Lee,Ji U
• Cuduvally,Ramya
• Dhakras,Prathamesh
• Nguyen,Phung
• Hughes,Harold L

Report Date:

2019-01-24

Pagination or Media Count:

9.0

Abstract:

We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natoris model and includes transmission probability and drain-channel coupling parameter. The latter parameter gives rise to a theoretical R-ON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices.

Descriptors:

• fermi levels
• transistors
• experimental data
• channel models
• electron mobility
• conduction bands
• dispersion relations
• electrons
• energy bands
• transport properties

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE