Accession Number:

AD1098579

Title:

Low-Defect III-N Devices By Remote Epitaxial GaN: FY19 Advanced Materials and Processes Line-Supported Program

Descriptive Note:

Technical Report

Corporate Author:

MIT Lincoln Laboratory Lexington United States

Personal Author(s):

Report Date:

2020-02-24

Pagination or Media Count:

8.0

Abstract:

Gallium nitride GaN is an important semiconductor, not just for visible-to-UV light emitters but also for high-power, high-voltage and high-frequency electronics. Much of the challenge in realizing a manufacturable process for GaN devices, particularly those requiring a low-defect density, is mitigating the unfavorable trade between substrate cost and suitability. Low-defect GaN substrates are commercially available but are expensive and still limited to a maximum of 100 mm diameter. Having the ability to separate the expensive GaN substrate from low-defect device layers, nondestructively to both would be an enabling technology for III-N devices. The goal of this program was to investigate using remote-epitaxy of GaN RE-GaN utilizing a thin graphene or similar layer to enable fracture and separation of the film at this interface due to the weakened bond strength due to graphitic layer.

Subject Categories:

  • Miscellaneous Materials
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE