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Accession Number:
AD1098537
Title:
Monolayer Tungsten Disulfide as a Valleytronic Material: FY17 Line-Supported Novel and Engineered Materials Program
Descriptive Note:
Technical Report
Corporate Author:
MIT Lincoln Lab Lexington United States
Report Date:
2018-02-02
Pagination or Media Count:
54.0
Abstract:
Both classical and quantum computing face significant challenges. Field effect transistor technology is reaching the fundamental limits of scaling and no proposed replacement technology has yet demonstrated even comparable performance. Scaling the number of entangled qubits to that required to solve useful problems is an enormous challenge with current device technology. Both fields stand to benefit from transformational devices based on new physical phenomena. Two-dimensional transition metal dichalcogenides TMDs possess a number of intriguing electronic, photonic, and excitonic properties. This proposal focuses on their valleytronic properties, which are truly unique to this new class of materials. Due to a lack of inversion symmetry and strong spin-orbit coupling, 2D TMDs possess individually addressable valleys in momentum space at the K and K points in the first Brillouin zone. This valley addressability opens the possibility of using electron and hole momentum states as a completely new paradigm in information processing. Manipulating the K and K momentum states could permit classical computation at a small fraction of the energy cost incurred by traditional field effect transistors. For quantum computation, qubits could be constructed out of TMD devices, with the benefit of long coherence times at elevated temperatures due to valley-protection of the spin states.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
