Accession Number:

AD1096987

Title:

High-Pressure, High-Temperature Molecular Doping of Nanodiamond

Descriptive Note:

Journal Article - Open Access

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States

Personal Author(s):

• Crane ,M. J.
• Petrone ,A.
• Beck ,R. A.
• Lim ,M. B.
• Zhou ,X.
• Li ,X.
• Stroud ,R. M.
• Pauzauskie,P. J.

Report Date:

2019-05-03

Pagination or Media Count:

8.0

Abstract:

The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion implantation by synthesis of a doped amorphous carbon precursor and transformation at high temperatures and high pressures. To explore this bottom-up method for color center generation, we rationally create silicon vacancy defects in nanodiamond and investigate them for optical pressure metrology. In addition, we show that this process can generate noble gas defects within diamond from the typically inactive argon pressure medium, which may explain the hysteresis effects observed in other high-pressure experiments and the presence of noble gases in some meteoritic nanodiamonds. Our results illustrate a general method to produce color centers in diamond and may enable the controlled generation of designer defects.

Descriptors:

• color centers
• high pressure
• ion implantation
• electron microscopy
• diamonds
• doping
• high temperature
• LUMINESCENCE
• carbon
• phase
• TRANSITIONs

Subject Categories:

• Solid State Physics
• Geology, Geochemistry and Mineralogy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE