Accession Number:
AD1096865
Title:
Implementation of a 900 V Switching Circuit for High Breakdown Voltage Beta-Ga2o3 Schottky Diodes
Descriptive Note:
Journal Article - Open Access
Corporate Author:
NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States
Personal Author(s):
Report Date:
2019-05-22
Pagination or Media Count:
7.0
Abstract:
This paper presents a switching circuit for high breakdown-voltage Ga2O3 vertical Schottky rectifiers. Field-plated edge-terminated FPET vertical Schottky diodes were fabricated on a 20-mu m thick Si-doped n-type Ga2O3 drift layer which was grown on the 650-mu m thick beta-Ga2O3 substrate via halide vapor phase epitaxy HVPE. The measured reverse recovery time of the proposed Ga2O3 Schottky diode was 81 ns when switched to a reverse bias voltage of -900 V. The implementation of a switching circuit with the novel Ga2O3 diode is the first demonstrated at such a high switching voltage. This paper also provides insights for the practical implementation of the Ga2O3 vertical Schottky rectifiers from device fabrication to circuit design.
Descriptors:
- circuit boards
- rectifiers
- semiconductors
- switching
- waveforms
- charge carriers
- circuits
- compound semiconductors
- electronics
- high voltage
- materials
- power converters
- schottky diodes
- simulations
- switching circuits
- fabrication
- silicon carbide
- computer aided design
- metal semiconductor junctions
- power electronics