Implementation of a 900 V Switching Circuit for High Breakdown Voltage Beta-Ga2O3 Schottky Diodes
Journal Article - Open Access
NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States
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This paper presents a switching circuit for high breakdown-voltage Ga2O3 vertical Schottky rectifiers. Field-plated edge-terminated FPET vertical Schottky diodes were fabricated on a 20-mu m thick Si-doped n-type Ga2O3 drift layer which was grown on the 650-mu m thick beta-Ga2O3 substrate via halide vapor phase epitaxy HVPE. The measured reverse recovery time of the proposed Ga2O3 Schottky diode was 81 ns when switched to a reverse bias voltage of -900 V. The implementation of a switching circuit with the novel Ga2O3 diode is the first demonstrated at such a high switching voltage. This paper also provides insights for the practical implementation of the Ga2O3 vertical Schottky rectifiers from device fabrication to circuit design.
- Electrical and Electronic Equipment