Accession Number:

AD1096690

Title:

High Performance Short Channel Field Effect Transistors Based on 2D Materials with Ohmic Contacts

Descriptive Note:

Technical Report,15 Jun 2016,14 Jun 2019

Corporate Author:

Rutgers, The State University of New Jersey New Brunswick United States

Personal Author(s):

• Chhowalla,Manishkumar U.

Report Date:

2019-10-30

Pagination or Media Count:

9.0

Abstract:

We have built on our discovery of achieving clean contacts using indium as the contact metal. In addition, we have begun to tune the metal deposition method achieve clean interfaces between refractory metals with high work functions and 2-D semiconductors to achieve p-type contacts. Our very recent results suggest it is possible to create clean vdW contacts via direct deposition of high work function metals on single TMD semiconductors. Our strategy is to use a very low deposition rates and substrate cooling down to 77K to eliminate damage and chemical reactions.

Descriptors:

• two dimensional materials
• field effect transistors
• bulk semiconductors
• conduction bands
• electrodes
• refractory metals
• semiconductor devices
• thermionic emission
• current density
• low temperature
• work functions
• chemical reactions
• energy bands
• semiconductors

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE