High Performance Short Channel Field Effect Transistors Based on 2D Materials with Ohmic Contacts
Technical Report,15 Jun 2016,14 Jun 2019
Rutgers, The State University of New Jersey New Brunswick United States
Pagination or Media Count:
We have built on our discovery of achieving clean contacts using indium as the contact metal. In addition, we have begun to tune the metal deposition method achieve clean interfaces between refractory metals with high work functions and 2-D semiconductors to achieve p-type contacts. Our very recent results suggest it is possible to create clean vdW contacts via direct deposition of high work function metals on single TMD semiconductors. Our strategy is to use a very low deposition rates and substrate cooling down to 77K to eliminate damage and chemical reactions.
- Electrical and Electronic Equipment