Accession Number:

AD1096687

Title:

Growth and Characterization of SiGeSn Using Ultra-High-Vacuum Plasma-Enhanced Chemical Vapor Deposition Technique for Silicon Based Mid- infrared Laser and Detector Applications

Descriptive Note:

Technical Report,30 Sep 2014,29 Sep 2018

Corporate Author:

University of Arkansas System Pine Bluff United States

Personal Author(s):

Report Date:

2019-01-03

Pagination or Media Count:

45.0

Abstract:

The research activities during the project period was focused on the following directions 1- Growth of SiGeSn materials grown via UHV-CVD and RP-CVD 2- Characterization of SiGeSn materials using PL, Raman, Ellipsometry, XRD, TEM, SIMS, to investigate Si and Sn composition, lattice constants, strain, relaxation, crystallinity, and epitaxial film quality 3- Systematic study of GeSnGeSnGeSn and SiGeSnGeSnSiGeSn QW structures with Ge and GeSn buffer layers to achieve direct bandgap type-I band alignment GeSn QW for photonics applications 4-Design, fabrication, and characterization of GeSn lasers and photodetectors for mid-infrared photonics and optoelectronics

Subject Categories:

  • Lasers and Masers
  • Industrial Chemistry and Chemical Processing

Distribution Statement:

APPROVED FOR PUBLIC RELEASE