Investigating Heteroepitaxy Principles and Transport Characteristics of Vertically Integrated GaN-on-Graphene Heterostructures
Technical Report,30 Sep 2016,29 Sep 2019
University of Illinois Urbana United States
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Next generation high-power and high-frequency power electronics will operate at power densities and frequencies reaching above60 Wmm and 10 GHz, respectively. Here, annealed, thin-Al2O3AlGaNGaN metal-insulator-semiconductor heterostructures on Si111 are fabricated and studied via capacitance voltage measurements to quantify densities of fast and slow interface trap states and via current voltage measurements to investigate dominant gate current leakage mechanisms. This project pushes our understanding on the limits of electron and photon interactions with matter, and explores thermal properties of GaN as well as GaN substrate interfaces.
- Electrical and Electronic Equipment