Accession Number:

AD1096596

Title:

Modulation-Doped Heterovalent Structures for High-Speed Electronic Device Applications

Descriptive Note:

Technical Report,01 Jun 2015,28 Feb 2019

Corporate Author:

ARIZONA STATE UNIVERSITY TEMPE United States

Personal Author(s):

• Zhang,Yong-Hang
• Smith,David

Report Date:

2019-08-14

Pagination or Media Count:

25.0

Abstract:

Optimized conditions for growing III-V, II-VI, and IV-VI materials in a single chamber were investigated, including experimenting withdifferent growth modes, substrate temperatures, flux ratios, and interface termination.

Descriptors:

• electronic equipment
• high velocity
• band gaps
• optoelectronic devices
• heterojunctions
• optoelectronics
• energy bands
• semiconductor devices
• compound semiconductors
• quantum efficiency
• silicon carbide
• transmission electron microscopy
• thermal expansion
• photoluminescence
• molecular beam epitaxy

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE