Modulation-Doped Heterovalent Structures for High-Speed Electronic Device Applications
Technical Report,01 Jun 2015,28 Feb 2019
ARIZONA STATE UNIVERSITY TEMPE United States
Pagination or Media Count:
Optimized conditions for growing III-V, II-VI, and IV-VI materials in a single chamber were investigated, including experimenting withdifferent growth modes, substrate temperatures, flux ratios, and interface termination.
- Electrical and Electronic Equipment