Accession Number:

AD1096305

Title:

Asymmetrical Contact Geometry to Reduce Forward-Bias Degradation in beta-Ga2O3 Rectifiers

Descriptive Note:

Journal Article - Open Access

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States

Personal Author(s):

• Xian,Minghan
• Fares,Chaker
• Ren,Fan
• Islam ,Zahabul
• Haque,Aman
• Tadjer ,Marko
• Pearton,S. J.

Report Date:

2020-03-13

Pagination or Media Count:

8.0

Abstract:

We report a study of the effect of different Schottky contact orientations on maximum current achievable before failure and also temperature distributions in vertical geometry Ga2O3 rectifiers. Due to the strong anisotropy of thermal conductivity in Ga2O3, asymmetrical Schottky contacts are needed to provide higher current density with enhanced lateral thermal dissipation, symmetrical temperature profile and lower junction temperature at a specific diode current density compared to symmetrical contacts. Devices with rectangular contacts fabricated on 001 orientated wafers with their long axis perpendicular to the 010 crystallographic direction show much greater resistance to thermal degradation under forward bias conditions than either square contact rectifiers or those oriented with their long axis oriented perpendicular to the 100 direction. An optimized contact orientation can produce a 25 increase in maximum forward current. Practical operating conditions for Ga2O3 power devices will need to encompass all aspects of thermal management, including these geometric factors as well as active and passive cooling.

Descriptors:

• schottky diodes
• metal semiconductor junctions
• power electronics
• materials
• thermal conductivity
• rectifiers
• geometry
• electron microscopes

Subject Categories:

• Numerical Mathematics
• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE