Radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene
Journal Article - Open Access
Georgia State University Atlanta United States
Pagination or Media Count:
We examine the characteristics of the microwavemm-waveterahertz radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene and report that the oscillation frequency of the radiation-induced magnetoresistance oscillations in the massless, linearly dispersed monolayer graphene system should depend strongly both on the Fermi energy, and the radiation frequency, unlike in the case of the massive, parabolic, GaAsAlGaAs 2D electron system, where the radiation-induced magnetoresistance oscillation frequency depends mainly on the radiation frequency. This possible dependence of the magnetoresistance oscillation frequency on the Fermi level at a fixed radiation frequency also suggests a sensitivity to the gate voltage in gated graphene, which suggests an in-situ tunable photo-excitation response in monolayer graphene that could be useful for sensing applications. In sharp contrast to monolayer graphene, bilayer graphene is expected to show radiation-induced magnetoresistance oscillations more similar to the results observed in the GaAsAlGaAs 2Dsystem. Such expectations for the radiation-induced magnetoresistance oscillations are presented here to guide future experimental studies in both of these modern atomic layer material systems.to guide future experimental studies in both of these modern atomic layer material systems.
- Miscellaneous Materials
- Electricity and Magnetism