Accession Number:

AD1096182

Title:

Coherent Backscattering In Quasi-ballistic Ultra High Mobility GaAs/AlGaAs 2DES

Descriptive Note:

Journal Article - Open Access

Corporate Author:

Georgia State University Atlanta United States

Personal Author(s):

• Samaraweera,R L
• Liu,H C
• Gunawardana,B
• Kriisa,A
• Reich,C
• Wegscheider,W
• Mani,R G

Report Date:

2018-07-03

Pagination or Media Count:

8.0

Abstract:

A small and narrow negative-magnetoresistance MR effect that appears about null magnetic field overthe interval 0.025 B 0.025 T in magneto transport studies of the GaAsAlGaAs 2D system with 107cm2Vs is experimentally examined as a function of the sample temperature, T. The temperaturedependent magnetoresistance data were fit using the Hikami et al. theory, without including the spinorbitcorrection, to extract the inelastic length, li, which decreases rapidly with increasing temperature.It turns out that li le, where le is the elastic length, for all T. Thus, we measured the single particlelifetime, s, and the single particle mean free path ls vFs. A comparison between li and ls indicatesthat li ls. The results suggest that the observed small and narrow magnetoresistance effect about nullmagnetic field could be a manifestation of coherent backscattering due to small angle scattering fromremote ionized donors in the high mobility GaAsAlGaAs 2DES.

Descriptors:

• backscattering
• conductivity
• electron electron interactions
• electron mobility
• elastic scattering
• electron density
• frequency
• low temperature
• magnetic fields
• materials
• measurement
• radiation
• resistance
• scattering
• two dimensional materials
• electrons
• heterojunctions
• electron gas
• inelastic scattering
• semiconductors

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE