p-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies
Journal Article - Open Access
NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States
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The synthesis of graphene on cubic silicon carbide on silicon pseudo substrates draws enormous interest due to the potential integration of the 2D material with the well-established silicon technology and processing. However, the control of transport properties over large scales on this platform, essential for integrated electronics and photonics applications, has lagged behind so far, due to limitations such as 3C-SiCSi interface instability and nonuniform graphene coverage. We address these issues by obtaining an epitaxial graphene EG onto 3C-SiC on a highly resistive silicon substrate using an alloy-mediated, solid source graphene synthesis. We report the transport properties of EG grown over large areas directly on 3C-SiC100 and 3C-SiC111 substrates, and we present the corresponding physical models. We observe that the carrier transport of EG3C-SiC is dominated by the graphene-substrate interaction rather than the EG grain size, sharing the same conductivity and same inverse power law as EG on 4H- or 6H-SiC0001 substrates- although the grain sizes for the latter are vastly different. In addition, we show that the induced oxidationsilicates at the EG3C-SiC interface generate a p-type charge in this graphene, particularly high for the EG3C-SiC001. When silicates are at the interface, the presence of a buffer layer in the EG3C-SiC111 system is found to reduce somewhat the charge transfer. This work also indicates that a renewed focus on the understanding and engineering of the EG interfaces could very well enable the long sought-after graphene-based electronics and photonics integrated on silicon.
- Solid State Physics
- Metallurgy and Metallography