Optical and Electrical Properties of NiFe-oxide Thin Films
Technical Report,01 Sep 2015,31 Aug 2019
Texas State University San Marcos United States
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Major Goals The objective of this research project was to conduct fundamental research to better understand electronic transport in RF sputtered Fe doped nickel oxide thin films for application in radiation-hard, low-energy, high-speed logic resistive-memory devices. A complementary experimental and theoretical approach was followed to investigate the optical and electrical transport properties of RF sputtered NiFe-oxide thin films and their applicability to RRAM devices. Experimental goals 1 structural and chemical characterization using XRD, EDAX, XPS and RBS. 2 optical characterization using FTIR, ellipsometry, and optical transmission measurements. 3 electrical characterization including four and two-point probe IV measurements, CV measurements, and DLTS measurements. Samples are continuous thin films and devices. Experiments are supplemented by device computations using the finite element technique. 4 magnetic characterization using VSM, Magneto-Optical Kerr magnetometry, and MFM. Theoretical goals DFT calculations to better understand the electronic structure and ion mobility of NiO and doped NiO. In particularly the effect of iron-doping and vacancies on the optical, magnetic, and electrical properties.
- Electricity and Magnetism
- Electrical and Electronic Equipment