Accession Number:

AD1096144

Title:

Optical and Electrical Properties of NiFe-oxide Thin Films

Descriptive Note:

Technical Report,01 Sep 2015,31 Aug 2019

Corporate Author:

Texas State University San Marcos United States

Personal Author(s):

• Scolfaro,Luisa
• Geerts,Wim

Report Date:

2019-12-16

Pagination or Media Count:

44.0

Abstract:

Major Goals The objective of this research project was to conduct fundamental research to better understand electronic transport in RF sputtered Fe doped nickel oxide thin films for application in radiation-hard, low-energy, high-speed logic resistive-memory devices. A complementary experimental and theoretical approach was followed to investigate the optical and electrical transport properties of RF sputtered NiFe-oxide thin films and their applicability to RRAM devices. Experimental goals 1 structural and chemical characterization using XRD, EDAX, XPS and RBS. 2 optical characterization using FTIR, ellipsometry, and optical transmission measurements. 3 electrical characterization including four and two-point probe IV measurements, CV measurements, and DLTS measurements. Samples are continuous thin films and devices. Experiments are supplemented by device computations using the finite element technique. 4 magnetic characterization using VSM, Magneto-Optical Kerr magnetometry, and MFM. Theoretical goals DFT calculations to better understand the electronic structure and ion mobility of NiO and doped NiO. In particularly the effect of iron-doping and vacancies on the optical, magnetic, and electrical properties.

Descriptors:

• optical properties
• Electrical Properties
• thin films
• oxides
• magnetic properties
• transition metals
• heterojunctions
• Crystal Structure
• Stoichiometry
• band structures
• density functional theory

Subject Categories:

• Optics
• Electricity and Magnetism
• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE