Accession Number:

AD1093306

Title:

Radiation Hardened Memristive Technologies for Space-based Nonvolatile Memory

Descriptive Note:

Technical Report,30 Jul 2015,07 Nov 2019

Corporate Author:

ARIZONA STATE UNIV TEMPE TEMPE United States

Report Date:

2019-11-07

Pagination or Media Count:

92.0

Abstract:

We seek to demonstrate the viability of a commercially compatible resistive RAM RRAM as a non-volatile-memory technology for space electronics and to optimize RRAM array architectures and peripheral circuitry for space applications. Our studies have shown that the RRAM technology has high total ionizing dose TID and displacement damage DD tolerance. In this program we are seeking to demonstrate that compared to FLASH, RRAM has the potential for better programming cycle endurance, faster programming speed, lower power requirements, and much better scalability down to 100 nm feature sizes. Meeting these specifications would make RRAM a strong candidate for supplanting FLASH as the most widely used NVM technology. Summarizing the above listed advantages, the RRAM technology may show improved performance and likely greater radiation hardness compared to FLASH technology, bringing significant benefits to the next generation of space systems. In this program we are trying to move forward with a wafer level fabrication of a RRAM integrated circuit to that demonstrates these improvements.

Subject Categories:

  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE