P-Gallium Nitride (GaN) Ohmic Contact Process Development
Technical Report,02 Oct 2018,30 Sep 2019
CCDC Army Research Laboratory Adelphi United States
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Low-resistance ohmic contacts to magnesium-doped p-type gallium nitride GaN grown by both metalorganic chemical vapor deposition and molecular beam epitaxy with carrier concentrations of 1015 and 1018 cm3 were studied and their measured p-type specific contact resistivities were as low as 5.3 103 cm2 and 1.8 103 cm2, respectively. The optimized process included electron beam deposited palladium Pdnickelgold Au or PdAu contacts annealed at 500 to 550 C for 10 min in a flowing N2 and O2 ambient. Prior to deposition, the GaN surface was treated to remove the native oxide by buffer oxide etching and hydrochloride etching at 100 C for 10 min.
- Electricity and Magnetism
- Inorganic Chemistry
- Miscellaneous Materials