32NM HAFNIUM (IV) DIOXIDE (HFO2) NEGATIVE METAL OXIDE SEMICONDUCTOR (NMOS) ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORIES (EEPROMS) FOR OPEN SYSTEMS COMPUTER APPLIANCES
Technical Report,01 Jan 2017,30 Jun 2019
Oklahoma State University Stillwater United States
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The research objectives of this work are improvements to stress arrays of low threshold HfO2SiOx N-CMOS architectures. Many of these designs are currently employed in advanced computer architectures that have secure capabilities for the Air Force Research Laboratory AFRL in Rome, NY. This will be accomplished by creating a complete design flow integration with commercial and open-source Electronic Design Automation EDA tools. Designs will then be formalized as EEPROM bank cell intellectual property. The acceleration parameter is then combined with time dependent breakdown models resulting in device lifetime models for both write and ease as a function of applied gate voltage. This results in write and erase protocols as a function. Results demonstrate successful research that utilizes the CMOS SOI32 EEPROM test structures submitted with USAFAFMC AFRLRITA to develop Stochastic based write-erase models and other yield-associated results.
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