Accession Number:

AD1092097

Title:

Comparison of Planar vs. Textured Silicon Carbide (SiC) Betavoltaic Devices

Descriptive Note:

Technical Report,01 Oct 2018,30 Sep 2019

Corporate Author:

CCDC Army Research Laboratory Adelphi United States

Report Date:

2020-02-19

Pagination or Media Count:

27.0

Abstract:

This technical report describes the US Army Combat Capabilities Development Command Army Research Laboratorys FY19 research effort on silicon carbide SiC PIN betavoltaic devices. We compare the output power of SiC betavoltaic devices in both planar and textured geometries upon deposition of liquid 63NiCl2 radioisotopes. Our liquid radioisotope device results suggest an 8 improvement of output power in going from a planar to a textured design. This work was done in collaboration with Oak Ridge National Laboratory and the University at Albany.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE