Comparison of Planar vs. Textured Silicon Carbide (SiC) Betavoltaic Devices
Technical Report,01 Oct 2018,30 Sep 2019
CCDC Army Research Laboratory Adelphi United States
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This technical report describes the US Army Combat Capabilities Development Command Army Research Laboratorys FY19 research effort on silicon carbide SiC PIN betavoltaic devices. We compare the output power of SiC betavoltaic devices in both planar and textured geometries upon deposition of liquid 63NiCl2 radioisotopes. Our liquid radioisotope device results suggest an 8 improvement of output power in going from a planar to a textured design. This work was done in collaboration with Oak Ridge National Laboratory and the University at Albany.
- Electrical and Electronic Equipment