Accession Number:

AD1090823

Title:

Single Step Bonding of Thick Anodized Aluminum Oxide Templates to Silicon Wafers for Enhances System-on-a-Chip Performance

Descriptive Note:

Technical Report

Corporate Author:

University of Florida Gainesville United States

Report Date:

2020-01-15

Pagination or Media Count:

26.0

Abstract:

Vertically-aligned nanowires are of interest for novel applications including sensing, photonics, and energy storage. Templated synthesis of such structures has been previously demonstrated via anodized aluminum oxide AAO. However, the performance of AAO-on-Si devices has been limited by current methods of obtaining well-adhered, thick AAO templates on Si substrates. Thicker AAO templates allow for longer nanowires of active material, which is expected to increase performance of devices reliant on the surface area or volume of the active material. In this report, Al-Si eutectic bonding was used to achieve thick AAO-on-Si, with templates up to 90 m thick bonded to the wafer. Carbon nanotubes CNTs were grown in the AAO templates bonded to Si to create proof-of-concept on-chip supercapacitor devices. Our devices show a promising value of 0.44 mF cm-2, much higher than previous AAO-on-Si capacitors. The structure of the CNTAAOSi stack is examined using SEM and TEM, and the device performance is tested through cyclic voltammetry CV, electrochemical impedance spectroscopy EIS, and galvanostatic charge-discharge GCD measurements.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE