Accession Number:

AD1088533

Title:

Brightness Scaling in Mid-Infrared Laser Diodes

Descriptive Note:

Technical Report,01 Oct 2016,01 Oct 2019

Corporate Author:

Air Force Research Laboratory Kirtland AFB United States

Personal Author(s):

Report Date:

2019-08-05

Pagination or Media Count:

18.0

Abstract:

We demonstrate GaSb-based diode lasers emitting near 2.7 m that are fabricated as on-chip unstable resonator cavities using the focused ion beam tool. A near-diffraction-limited lateral beam is observed in broad-area devices where the reflection from the cylindrical mirror at the back facet overrides direct counter propagation in the cavity to suppress the formation of filaments. We identify a geometric parameter that can be used as a general guide to optimizing the on-chip unstable resonator cavity for maximum brightness. This parameter is the aperture within the unstable resonator cavity, a measure of the angular divergence contained within the device, and is shown to correlate with the onset of filament suppression.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE