Accession Number:

AD1088254

Title:

Alloying Behavior and Crystallinity of (111)-Oriented Lead Tin Telluride Grown on (100)-Oriented Gallium Arsenide

Descriptive Note:

Technical Report,01 Oct 2018,30 Sep 2019

Corporate Author:

CCDC Army Research Laboratory Adelphi United States

Personal Author(s):

Report Date:

2019-12-19

Pagination or Media Count:

19.0

Abstract:

Ternary lead tin telluride PbxSn1-xTe alloy films are grown on 100-oriented gallium arsenide GaAs substrates with molecular beam epitaxy in order to achieve a heteroepitaxial system that enables technological innovations for IR photonics, thermoelectrics, and topological insulators. X-ray diffraction is used to study the crystallinity of this ternary alloy and its epitaxial nature in relation to the GaAs substrate. Symmetric 2- scans across the alloy range and a reciprocal space map RSM of a ternary PbxSn1-xTe compound confirm an epitaxial growth, with a 111-oriented film on a 100-oriented substrate. Broadening in reciprocal space within the RSM makes it difficult to determine an in-plane lattice constant or strain, but evidence indicates that the film is relaxed. This work enables innovations in future growth for Group IV-VI materials on III-V substrates to develop technologies in the aforementioned application space.

Subject Categories:

  • Properties of Metals and Alloys
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE