Thermoelectric Phenomena in Quasi-One-Dimensional Metals
Technical Report,15 Dec 2017,14 Dec 2019
THE TRUSTEES OF COLUMBIA UNIVERSITY NEW YORK, United States
Pagination or Media Count:
Epitaxial Ru films with resistivities that approach the bulk resistivity in the thick film limit have been prepared. Methods have also been developed to controllably grow ultrathin silica capping layers over Ru0001-terminated films. The structure of the films with and without surface oxide layers was characterized by X-ray diffraction, X-ray reflectivity, X-ray photoelectron spectroscopy, low energy electron diffraction, scanning transmission electron microscopy and selected area electron diffraction. Highly specular electron surface scattering has been obtained for suitably processed 0001 Ru surfaces. The fabrication of nanowires from the single crystal films by focused He ion beam milling has been unsuccessful and efforts have recently been redirected to the more conventional electron beam lithography. A code based on the tight-binding approach for electronic band structure and electrical transport calculations has been developed. The code implements the KernelPolynomial method very efficiently, using an approach which scales linearly with the number of atomic sites.