2018 Defects in Semiconductors Gordon Research Conference and Gordon Research Seminar Research Program 1.3 Physical Properties of Materials, Materials Science Division
Technical Report,19 Jul 2018,14 Nov 2018
Gordon Research Conferences, Inc. West Kingston United States
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Semiconductor devices, from the earliest transistors to the projected spinristors, depend critically on defects. Methods to controllably add and minimize defects are essential for the success of optical, electronic, and spintronic based technologies, therefore, developing a detailed understanding of their fundamental physics and chemistry is mandatory for the creation of new game-changing devices. This Gordon Research Conference is a unique biannual opportunity to discuss defects across all semiconductor materials and applications in an off-the-record format. By blending lecture hall discourse and social gatherings, young scientists and experienced professionals will learn the latest concerns and advances in semiconductors while enjoying the conference-friendly facilities and relaxing atmosphere of Colby-Sawyer College. The meeting addressed the theoretical basics as well as the characterization and utility of point, line and extended defects in a broad range of topical materials. This includes defects in novel two-dimensional materials such as transition metal dichalcogenides and other graphene analogues along with semiconductors relevant to quantum emission processes. We also expect sessions to address wide bandgap nitride, oxide, and carbide semiconductors with evolving applications in electronics for power generation and lighting. The Gordon Research Seminar on Defects in Semiconductors focused on identifying, understanding, and then controlling defects in order to use their properties to engineer new semiconductor materials and devices. The role of defects in electronic and optoelectronic devices, quantum information and metrology, and photocatalysis was explored.
- Electrical and Electronic Equipment
- Miscellaneous Materials