Accession Number:



Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

Descriptive Note:

Journal Article - Open Access

Corporate Author:

University of Virginia Charlottesville United States

Report Date:


Pagination or Media Count:



The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition ALD for thin film growth. The ability to deposit high dielectric constant high-k films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these dielectric layers is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. Time domain thermoreflectance is used to interrogate both the thermal conductivity and the thermal boundary resistance of aluminum oxide, hafnium oxide, and titanium oxide films on silicon. We calculate a representative design map of effective thermal resistances, including those of the dielectric layers and boundary resistances, as a function of dielectric layer thickness, which will be of great importance in predicting the thermal resistances of current and future devices.

Subject Categories:

  • Thermodynamics
  • Electricity and Magnetism

Distribution Statement: