Accession Number:

AD1083383

Title:

Magnetic-Field-Dependent Quantum Emission in Hexagonal Boron Nitride at Room Temperature

Descriptive Note:

Journal Article - Open Access

Corporate Author:

University of Pennsylvania Philadelphia United States

Report Date:

2019-01-15

Pagination or Media Count:

8.0

Abstract:

Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing transitions facilitate optical spin initialization and readout. Recently, the van der Waals material hexagonal boron nitride h-BN has emerged as a robust host for quantum emitters, promising efficient photon extraction and atom-scale engineering, but observations of spin-related effects have remained thus far elusive. Here, we report room-temperature observations of strongly anisotropic photoluminescence patterns as a function of applied magnetic field for select quantum emitters in h-BN. Field-dependent variations in the steady-state photoluminescence and photon emission statistics are consistent with an electronic model featuring a spin-dependent inter-system crossing between triplet and singlet manifolds, indicating that optically-addressable spin defects are present in h-BN.

Subject Categories:

  • Electrical and Electronic Equipment
  • Optics
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE