Accession Number:

AD1082681

Title:

Vertical Transport in InAs/GaSb and InAs/InAsSb Superlattices: 4.3 Electronic Sensing

Descriptive Note:

Technical Report,01 Jul 2016,31 Dec 2018

Corporate Author:

University of New Mexico Albuquerque Albuquerque United States

Report Date:

2019-03-31

Pagination or Media Count:

19.0

Abstract:

Vertical transport in narrow band gap antimonide based type-II strained layer superlattices T2SLs is a significant problem for the design of Mid-Wave Infrared MWIR, 3-5 m photodetectors. Investigation of the transport of electrons and holes in T2SLs is necessary to understand better how or if one can improve carrier collection efficiency through design or changes in material properties of this essential infrared absorber material. This report provides lateral and vertical transport results using magneto-transport for InAsSb alloys isotropic and InAsInAsSb T2SLs anisotropic. Then, vertical transport using EBIC technique will be discussed with results for InAsGaSb T2SL.

Subject Categories:

  • Nuclear Physics and Elementary Particle Physics
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE