Magnetic topological insulator enabled spin-orbit torque device applications - 4.1 Nano-and Bio-Electronics
Technical Report,01 Oct 2014,30 Jun 2015
University of California - Los Angeles Los Angeles United States
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In the original proposal, we proposed to study the current-induced spin-orbit torque SOT in the uniformly Cr-doped magnetic topological insulator TI sandwiched between two different dielectric materials to reveal the origin of the giant SOT. During the research period, we have successfully grown Cr-doped TIs on GaAs substrate with high quality and cap it with Al2O3 layer. The magnetism in the Cr-doped TI is very robust, and it can even reach the quantum anomalous Hall phase at low temperature see X. Kou et al., Nature Communications 68474 2015. Then we probed the current-induced SOT in this structure.
- Electricity and Magnetism
- Atomic and Molecular Physics and Spectroscopy